RU2H30R N-Channel Advanced Power MOSFET

Ruichips

RU2H30R Description

.
GD S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.

RU2H30R Features

* 200V/30A, RDS (ON) =75mΩ(Typ. ) @ VGS=10V
* Ultra Low On-Resistance
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested
* 175°C Operating Temperature

RU2H30R Applications

* Switching Application Systems

📥 Download Datasheet

RU2H30R Datasheet Preview — Preview of RU2H30R PDF

Datasheet Details

Part number: RU2H30R
Manufacturer: Ruichips
File Size: 306.46 KB
Datasheet: RU2H30R-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

📁 Related Datasheet

RU2H50R - N-Channel MOSFET (INCHANGE)
RU2 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU20A - FAST RECOVERY RECTIFIER DIODE (EIC)
RU2441B04 - RF Module (Samsung)
RU2441B04GCA - RF Module (Samsung)
RU2441B04UAA - RF Module (Samsung)
RU2441H04 - RF Module (Samsung)
RU2441H04CAA - RF Module (Samsung)

📌 All Tags

N-Channel Advanced Power MOSFET Ruichips

Ruichips RU2H30R-like datasheet

RU2H30Q - N-Channel Advanced Power MOSFET
RU2H30S - N-Channel Advanced Power MOSFET
RU2H15S - N-Channel Advanced Power MOSFET
RU2H50Q - N-Channel Advanced Power MOSFET
RU2H50S - N-Channel Advanced Power MOSFET
RU2HE2D - N-Channel Advanced Power MOSFET