RU2H30S Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU2H30S, N-Channel Advanced Power MOSFET

D G S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

RU2H30S Features

* 200V/30A, RDS (ON) =75mΩ(Typ.) @ VGS=10V

* Ultra Low On-Resistance

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Available Applications

* Switching Application Systems