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RU2H30S N-Channel Advanced Power MOSFET

RU2H30S Description

.
D G S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-.

RU2H30S Features

* 200V/30A, RDS (ON) =75mΩ(Typ. ) @ VGS=10V
* Ultra Low On-Resistance
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested
* 175°C Operating Temperature

RU2H30S Applications

* Switching Application Systems

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Datasheet Details

Part number
RU2H30S
Manufacturer
Ruichips
File Size
309.55 KB
Datasheet
RU2H30S-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

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