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STB15NM60ND N-Channel MOSFET

STB15NM60ND Description

isc N-Channel MOSFET Transistor STB15NM60ND .
Drain Current: ID=14A@ TC=25℃. Drain Source Voltage: : VDSS= 600V(Min). 100% avalanche tested. Minimum Lot-to-Lot variations for robu.

STB15NM60ND Applications

* Power switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 14 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number
STB15NM60ND
Manufacturer
INCHANGE
File Size
211.93 KB
Datasheet
STB15NM60ND-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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