STB15NM65N Datasheet (STMicroelectronics)

STB15NM65N, N-channel Power MOSFET

This series of devices implements the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high effi

STB15NM65N Features

* www.DataSheet4U.com Type VDSS RDS(on) Max (@Tjmax) 710 V 710 V 710 V 710 V 710 V < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 STB15NM65N STF15NM65N STI15NM65N STP15NM65N STW15NM65N 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 1 2 3 1. Limited only by m