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TK12E60W N-Channel MOSFET

TK12E60W Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12E60W，ITK12E60W *.

TK12E60W Features

* Low drain-source on-resistance: RDS(on) ≤0.3Ω.
* Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE MAXI

TK12E60W Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
TK12E60W
Manufacturer
INCHANGE
File Size
241.63 KB
Datasheet
TK12E60W-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE TK12E60W-like datasheet