TK12E60W Datasheet - INCHANGE

TK12E60W, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12E60W，ITK12E60W *

Features

* Low drain-source on-resistance: RDS(on) ≤0.3Ω.

* Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE MAXI

Applications

* of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

TK12E60W-INCHANGE.pdf