TK16A60W5 - N-Channel MOSFET
TK16A60W5 Features
* Low drain-source on-resistance: RDS(ON) = 0.18Ω (typ.)
* Easy to control Gate switching
* Enhancement mode: Vth = 3.0 to 4.5 V (VDS = 10 V, ID=0.79 mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
