Datasheet Details
- Part number
- IRHM9150
- Manufacturer
- IRF
- File Size
- 136.57 KB
- Datasheet
- IRHM9150_IRF.pdf
- Description
- Radiation Hardened Power MOSFET
IRHM9150 Description
PD - 90889D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080 Ω .IRHM9150 Features
* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC =IRHM9150 Applications
* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC
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