* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC =
IRHM9150 Datasheet (136.57 KB)
IRHM9150
IRF
136.57 KB
Radiation hardened power mosfet.
PD - 90889D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080 Ω .
📁 Related Datasheet
IRHM9130 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHM9160 POWER MOSFET (IRF)
IRHM9064 P-Channel Transistor (IRF)
IRHM9230 P-Channel Transistor (IRF)
IRHM9250 RADIATION HARDENED POWER MOSFET (IRF)
IRHM9260 RADIATION HARDENED POWER MOSFET (IRF)
IRHM93130 RADIATION HARDENED POWER MOSFET THRU-HOLE (International Rectifier)
IRHM93150 RADIATION HARDENED POWER MOSFET THRU-HOLE (International Rectifier)
IRHM93250 RADIATION HARDENED POWER MOSFET THRU-HOLE (International Rectifier)
IRHM2C50SE N-Channel Transistor (IRF)
