IRHM9130 Datasheet - International Rectifier

IRHM9130 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 90888C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM9130 100K Rads (Si) IRHM93130 300K Rads (Si) RDS(on) 0.3 Ω 0.3 Ω ID -11A -11A IRHM9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devic.

IRHM9130 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @

IRHM9130 Datasheet (166.87 KB)