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IRHM9250 Datasheet - IRF

IRHM9250 RADIATION HARDENED POWER MOSFET

PD - 91299D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY ™ ® RDS(on) I D QPL Part Number 0.315Ω -14A JANSR2N7423 0.315Ω -14A JANSF2N7423 International Rectifier’s RAD-Hard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performan.

IRHM9250 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @

IRHM9250_IRF.pdf

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Datasheet Details

Part number:

IRHM9250

Manufacturer:

IRF

File Size:

133.12 KB

Description:

Radiation hardened power mosfet.

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IRHM9250 IRHM9250 RADIATION HARDENED POWER MOSFET IRF

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