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IRHM9230 Datasheet - IRF

IRHM9230 P-Channel Transistor

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1395 REPETETIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHM9230 P-CHANNEL RAD HARD Product Summary Part Number IRHM9230 BVDSS -200V RDS(on) 0.8Ω ID -6.5A -200 Volt, 0.8Ω , RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post.

IRHM9230 Features

* s s s s s s s s s s s s Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simp

IRHM9230_IRF.pdf

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Datasheet Details

Part number:

IRHM9230

Manufacturer:

IRF

File Size:

201.26 KB

Description:

P-channel transistor.

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IRHM9230 IRHM9230 P-Channel Transistor IRF

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