IRHM9230 Datasheet (IRF) - P-Channel Transistor

IRHM9230, P-Channel Transistor

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PD-9.1395 REPETETIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHM9230 P-CHANNEL RAD HARD Product Summary Part Number IRHM9230 BVDSS -200V RDS(on) 0.8Ω ID -6.5A -200 Volt, 0.8Ω , RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si).

Under identical pre- and post

IRHM9230 Features

* s s s s s s s s s s s s Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simp