IRL530NS Datasheet - IRF

IRL530NS HEXFET Power MOSFET

l D VDSS =100V G11 S RDS(on) = 0.10Ω ID = 17A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .

IRL530NS Features

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IRL530NS_IRF.pdf