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IRL530S - Power MOSFET

IRL530S Description

Power MOSFET IRL530S, SiHL530S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 100 VGS = 5.0 V 28 Qgs (nC) 3.8 Qgd (nC) 14.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRL530S Features

* Halogen-free According to IEC 61249-2-21 Definition
* Surface Mount
* Available in Tape and Reel
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Logic Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating

IRL530S Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. D2PAK (TO-263) SiHL530STRR-GE3a IRL530STRRPbFa SiHL530STR-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Sou

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Power MOSFET Vishay
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