IRL620 Power MOSFET

Vishay

Description

Power MOSFET IRL620, SiHL620 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 200 VGS = 5.0 V 16 Qgs (nC) 2.7 Qgd (nC) 9.6 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: IRL620
Manufacturer: Vishay ↗
File Size: 1.83 MB
Datasheet: IRL620-Vishay.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* Fast Switching Available RoHS
* COMPLIANT
* Ease of paralleling
* Simple Drive Requirements
* Compliant to RoH

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRL620PbF SiHL620-E3 IRL620 SiHL620 ABSOLUTE MAXIMUM RATINGS (TC

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IRL620 Power MOSFET Vishay

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