IRL630 Power MOSFET

Vishay

Description

www.vishay.com IRL630 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qg.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: IRL630
Manufacturer: Vishay ↗
File Size: 1.13 MB
Datasheet: IRL630_Vishay.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Logic-level gate drive
* RDS(on) specified at VGS = 4 V and 5 V
* 150 °C operating temperature Available
* Fast switching
* Ease of paralleling
* Material categoriz

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRL630PbF IRL630PbF-BE3 ABSOLUTE MAXIM

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IRL630 Power MOSFET Vishay

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