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IRL510S - Power MOSFET

IRL510S Description

www.vishay.com IRL510S, SiHL510S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () .
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resista.

IRL510S Features

* Surface-mount
* Available in tape and reel
* Dynamic dv/dt rating
* Repetitive avalanche rated Available
* Logic-level gate drive
* RDS(on) specified at VGS = 4 V and 5 V
* 175 °C operating temperature Available
* Material cate

IRL510S Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. D2PAK (TO-263) SiHL510STRL-GE3 a IRL510STRLPbF a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Contin

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Power MOSFET Vishay
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