IRL520N Datasheet - IRF

IRL520N, HEXFET Power MOSFET

PD - 91494A IRL520N HEXFET® l l l l l l Power MOSFET VDSS = 100V Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Oper.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRL520N_IRF.pdf

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Datasheet Details

Part number:

IRL520N

Manufacturer:

IRF

File Size:

134.25 KB

Description:

HEXFET Power MOSFET

Features

* 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

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IRL520N HEXFET Power MOSFET IRF

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