JANSR2N7423 Datasheet - IRF

JANSR2N7423 RADIATION HARDENED POWER MOSFET

PD-91299E RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.315Ω 0.315Ω IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY ™ ® ID QPL Part Number -14A JANSR2N7423 -14A JANSF2N7423 International Rectifier’s RAD-Hard HEXFET ® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance.

JANSR2N7423 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight n ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID @ VGS = -1

JANSR2N7423-IRF.pdf

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Datasheet Details

Part number:

JANSR2N7423

Manufacturer:

IRF

File Size:

160.70 KB

Description:

Radiation hardened power mosfet.

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