JANSR2N7400 Datasheet - Intersil Corporation

JANSR2N7400 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined.

JANSR2N7400 Features

* 8A, 200V, rDS(ON) = 0.440Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Rat

JANSR2N7400_IntersilCorporation.pdf

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Datasheet Details

Part number:

JANSR2N7400

Manufacturer:

Intersil Corporation

File Size:

43.60 KB

Description:

8a/ 200v/ 0.440 ohm/ rad hard/ n-channel power mosfet.

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JANSR2N7400 JANSR2N7400 200V 0.440 Ohm Rad Hard N-Channel Power MOSFET Intersil Corporation

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