| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Infineon Technologies AG | JANSR2N7477T1-03 | Transistor MOSFET N-Channel 250V 37A 3-Pin TO-254AA - Bulk (Alt: JANSR2N7477T1-03) | Avnet Americas | 0 | 0 |
$0
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JANSR2N7477T1 Datasheet (180.43 KB)
JANSR2N7477T1
International Rectifier
180.43 KB
Radiation hardened power mosfet.
PD-95871
IRHMS57264SE
RADIATION HARDENED
JANSR2N7477T1
POWER MOSFET
250V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF.
* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25
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5 .
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Product.
JANSR2N7400 - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET
(Intersil Corporation)
JANSR2N7400
Formerly FSS230R4
June 1998
8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET
Description
The Discrete Products Operation of Intersil.
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