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JANSR2N7407 Datasheet - Intersil Corporation

JANSR2N7407 Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs

JANSR2N7407 Data Sheet December 1998 File Number 4636 Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which ar.

JANSR2N7407 Features

* 18A, 250V, rDS(ON) = 0.170Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Ra

JANSR2N7407_IntersilCorporation.pdf

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Datasheet Details

Part number:

JANSR2N7407

Manufacturer:

Intersil Corporation

File Size:

55.20 KB

Description:

Formerly available as fsf254r4/ radiation hardened/ segr resistant/ n-channel power mosfets.

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JANSR2N7407 JANSR2N7407 Formerly Available FSF254R4 Radiation Hardened SEGR Resistant N-Channel Power MOSFETs Intersil Corporation

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