Datasheet Details
- Part number
- JANSR2N7402
- Manufacturer
- Intersil Corporation
- File Size
- 45.62 KB
- Datasheet
- JANSR2N7402_IntersilCorporation.pdf
- Description
- 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7402 Description
JANSR2N7402 Formerly FSS430R4 June 1998 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and.
JANSR2N7402 Features
* 3A, 500V, rDS(ON) = 2.70Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rate
JANSR2N7402 Applications
* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica
📁 Related Datasheet
📌 All Tags