JANSR2N7475T1 Datasheet - International Rectifier

JANSR2N7475T1 RADIATION HARDENED POWER MOSFET

PD-95840A IRHMS57163SE RADIATION HARDENED JANSR2N7475T1 POWER MOSFET 130V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/685 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57163SE 100K Rads (Si) 0.0155Ω 45A JANSR2N7475T1 Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with usef.

JANSR2N7475T1 Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute Maximum Ratings

JANSR2N7475T1 Datasheet (192.03 KB)

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Datasheet Details

Part number:

JANSR2N7475T1

Manufacturer:

International Rectifier

File Size:

192.03 KB

Description:

Radiation hardened power mosfet.

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JANSR2N7475T1 RADIATION HARDENED POWER MOSFET International Rectifier

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