JANSR2N7478T1 - RADIATION HARDENED POWER MOSFET

Product Overview

International Rectifier

Part number	JANSR2N7478T1
Manufacturer	International Rectifier
File Size	158.12 KB
Description	RADIATION HARDENED POWER MOSFET
Datasheet	JANSR2N7478T1 Datasheet
Additional preview pages of the JANSR2N7478T1 datasheet.

n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Lin.

📁 Similar Datasheet

JANSR2N7400 - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7401 - 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7402 - 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7403 - 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET (Intersil Corporation)
JANSR2N7404 - 15A/ -200V/ 0.290 Ohm/ Rad Hard/ P-Channel Power MOSFET (Intersil Corporation)
JANSR2N7405 - 25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7406 - 24A/ 200V/ 0.110 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7407 - Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs (Intersil Corporation)

Other Datasheets by International Rectifier

Published: Jan 27, 2016 |