JANSR2N7476T1 Datasheet - International Rectifier

JANSR2N7476T1 RADIATION HARDENED POWER MOSFET

PD - 94765 IRHMS57260SE RADIATION HARDENED JANSR2N7476T1 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-19500/685 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57260SE 100K Rads (Si) 0.044Ω 45A JANSR2N7476T1 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an L.

JANSR2N7476T1 Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25

JANSR2N7476T1-InternationalRectifier.pdf