| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Infineon Technologies AG | JANSR2N7476T1-01 | Transistor MOSFET N-Channel 200V 45A 3-Pin TO-254AA - Bulk (Alt: JANSR2N7476T1-01) | Avnet Americas | 0 | 0 |
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JANSR2N7476T1 Datasheet (181.11 KB)
JANSR2N7476T1
International Rectifier
181.11 KB
Radiation hardened power mosfet.
PD - 94765
IRHMS57260SE
RADIATION HARDENED
JANSR2N7476T1
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-P.
* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25
📁 Related Datasheet
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REF: MIL-PRF-1.
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5 .
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JANSR2N7478T1 - RADIATION HARDENED POWER MOSFET
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Product.
JANSR2N7400 - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET
(Intersil Corporation)
JANSR2N7400
Formerly FSS230R4
June 1998
8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET
Description
The Discrete Products Operation of Intersil.
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International Rectifier
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International Rectifier
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POWER FIELD-EFFECT TRANSISTOR, 45A I(D), 200V, 0.044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA
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