JANSR2N7476T1 - RADIATION HARDENED POWER MOSFET

Product Overview

International Rectifier

Part number	JANSR2N7476T1
Manufacturer	International Rectifier
File Size	181.11 KB
Description	RADIATION HARDENED POWER MOSFET
Datasheet	JANSR2N7476T1 Datasheet
Additional preview pages of the JANSR2N7476T1 datasheet.

n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor Units 45 29 A 180 208 W.

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Published: Jan 27, 2016 |