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JANSR2N7432 - Radiation Hardened Power MOSFET

JANSR2N7432 Description

IRHM7160 (JANSR2N7432) Radiation Hardened Power MOSFET Thru-Hole (TO-254AA) 100V, 35A, N-channel, Rad Hard HEXFET™ Technology PD-91331G .
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

JANSR2N7432 Features

* Single event effect (SEE) hardened
* Low RDS(on)
* Low total gate charge
* Simple drive requirements
* Hermetically sealed
* Electrically isolated
* Ceramic eyelets
* ESD rating: Class 3B per MIL-STD-750, Method 1020 Product Summary
* BVDSS: 100V
* ID : 35A

JANSR2N7432 Applications

* DC-DC converter

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📁 Related Datasheet

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  • JANSR2N7403 - 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET (Intersil Corporation)
  • JANSR2N7404 - 15A/ -200V/ 0.290 Ohm/ Rad Hard/ P-Channel Power MOSFET (Intersil Corporation)
  • JANSR2N7405 - 25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)

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Radiation Hardened Power MOSFET International Rectifier
International Rectifier JANSR2N7432-like datasheet