IS42VM32400E, IS42VM81600E Datasheet - ISSI

IS42VM32400E - 128Mb Mobile Synchronous DRAM

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 128Mb Mobile Synchronous DRAM is designed to minimize current.

IS42VM32400E Features

* Fully synchronous; all signals referenced to a positive clock edge

* Internal bank for hiding row access and pre- charge

* Programmable CAS latency: 2, 3

* Programmable Burst Length: 1, 2, 4, 8, and Full Page

* Programmable Burst Sequence:

* Se

IS42VM81600E-ISSI.pdf