IS61QDB21M18C Datasheet - ISSI

IS61QDB21M18C 18Mb QUAD Synchronous SRAM

The 18Mb IS61QDB251236C and IS61QDB21M18C are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations .

IS61QDB21M18C Features

* 512Kx36 and 1Mx18 configuration available.

* On-chip Delay-Locked Loop (DLL) for wide data valid window.

* Separate independent read and write ports with concurrent read and write operations.

* Synchronous pipeline read with EARLY write operation.

* Double Data Rate (DDR) inter

IS61QDB21M18C-ISSI.pdf