IS61QDB21M18C - 18Mb QUAD Synchronous SRAM

ISSI

Datasheet Details

The 18Mb IS61QDB251236C and IS61QDB21M18C are synchronous, high-performance CMOS static random access memory (SRAM) devices.

512Kx36 and 1Mx18 configuration available.
On-chip Delay-Locked Loop (DLL) for wide data valid window.
Separate independent read and write ports with concurrent read and write operations.
Synchronous pipeline read with EARLY write operation.
Double Data Rate (DDR) interface for read and write input ports.
Fixed 2-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K#) for address and control registering at rising ed.

📁 IS61QDB21M18C Similar Datasheet

IS61C1024 - 128K x 8 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C1024L - 128K x 8 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C256 - 32K x 8 Low Voltage CMOS STATIC RAM (Integrated Silicon Solution)
IS61C25616 - 256K x 8 High Speed CMOS STATIC RAM (Integrated Silicon Solution)
IS61C25616AL - 256K x 16 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C25616AS - 256K x 16 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C256AH - 32K x 8 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C256AL - 32K x 8 High Speed CMOS STATIC RAM (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Feb 17, 2024 |