IS66WVE1M16ALL Datasheet - ISSI

IS66WVE1M16ALL 1.8V Core Async/Page PSRAM

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 16Mb DRAM core device is organized as 1 Meg x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (P.

IS66WVE1M16ALL Advanced Information 1.8V Core Async/Page PSRAM Overview The IS66WVE1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O t.

IS66WVE1M16ALL Features

* Asynchronous and page mode interface

* Dual voltage rails for optional performance

* VDD 1.8V, VDDQ 1.8V

* Page mode read access

* Interpage Read access : 70ns

* Intrapage Read access : 20ns

* Low Power Consumption

* Asynchronous Operation < 30 mA

* Intrapage R

IS66WVE1M16ALL Datasheet (385.31 KB)

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Datasheet Details

Part number:

IS66WVE1M16ALL

Manufacturer:

ISSI

File Size:

385.31 KB

Description:

1.8v core async/page psram.

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IS66WVE1M16ALL 1.8V Core Async Page PSRAM ISSI

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