IS66WVE1M16EALL - 16Mb Async/Page PSRAM
IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL 16Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WVE1M16TALL/BLL/CLL are integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits.
The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.
Both these modes reduce standby c
IS66WVE1M16EALL Features
* Asynchronous and page mode interface
* Dual voltage rails for optional performance
* ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
* BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
* CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
* Page mode read access
* Interpage Read access : 60ns, 70ns
* Intrap
