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IS66WVE1M16EALL Datasheet - ISSI

IS66WVE1M16EALL 16Mb Async/Page PSRAM

IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL 16Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WVE1M16TALL/BLL/CLL are integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby c.

IS66WVE1M16EALL Features

* Asynchronous and page mode interface

* Dual voltage rails for optional performance

* ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

* BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

* CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

* Page mode read access

* Interpage Read access : 60ns, 70ns

* Intrap

IS66WVE1M16EALL-ISSI.pdf

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Datasheet Details

Part number:

IS66WVE1M16EALL

Manufacturer:

ISSI

File Size:

502.74 KB

Description:

16mb async/page psram.

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IS66WVE1M16EALL IS66WVE1M16EALL 16Mb Async Page PSRAM ISSI

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