IS66WVE4M16ALL - 1.8V Core Async/Page PSRAM
PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.
The 64Mb DRAM core device is organized as 4 Meg x 16 bits.
These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (P
IS66WVE4M16ALL IS67WVE4M16ALL 1.8V Core Async/Page PSRAM Overview The IS66WVE4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.
The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.
Both these modes reduce standby current drain.
The die has separate power rails, VDDQ and VSSQ for the I/O to be r
IS66WVE4M16ALL Features
* Asynchronous and page mode interface
* Dual voltage rails for optional performance
* VDD 1.8V, VDDQ 1.8V
* Page mode read access
* Interpage Read access : 70ns
* Intrapage Read access : 20ns
* Low Power Consumption
* Asynchronous Operation < 30 mA
* Intrapage Re
