IS66WVE4M16ALL Datasheet - ISSI

1.8V Core Async/Page PSRAM

IS66WVE4M16ALL Features

* Asynchronous and page mode interface

* Dual voltage rails for optional performance

* VDD 1.8V, VDDQ 1.8V

* Page mode read access

* Interpage Read access : 70ns

* Intrapage Read access : 20ns

* Low Power Consumption

* Asynchronous Operation < 30 mA

* Intrapage Re

IS66WVE4M16ALL General Description

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 64Mb DRAM core device is organized as 4 Meg x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (P.

IS66WVE4M16ALL Datasheet (463.37 KB)

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IS66WVE4M16ALL

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ISSI

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463.37 KB

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1.8v core async/page psram.
IS66WVE4M16ALL IS67WVE4M16ALL 1.8V Core Async/Page PSRAM Overview The IS66WVE4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Ra.

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IS66WVE4M16ALL 1.8V Core Async Page PSRAM ISSI

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IS66WVE4M16ALL Features

IS66WVE4M16ALL General Description

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