IS66WVE4M16ECLL - 64Mb Async/Page PSRAM
PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.
The 64Mb DRAM core device is organized as 4 Meg x 16 bits.
These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (P
IS66WVE4M16EALL/BLL/CLL IS67WVE4M16EALL/BLL/CLL 64Mb Async/Page PSRAM PRELIMINARY INFORMATION Overview The IS66/67WVE4M16EALL/BLL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.
The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.
Both these modes reduce standby current drain.
The die has separa
IS66WVE4M16ECLL Features
* Asynchronous and page mode interface
* Dual voltage rails for optional performance
* ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
* BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
* CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
* Page mode read access
* Interpage Read access : 55ns, 70ns
* Intra
