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IS66WVE4M16BLL Datasheet - ISSI

IS66WVE4M16BLL 3.0V Core Async/Page PSRAM

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 64Mb DRAM core device is organized as 4 Meg x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (P.

IS66WVE4M16BLL 3.0V Core Async/Page PSRAM Overview The IS66WVE4M16BLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separ.

IS66WVE4M16BLL Features

* Asynchronous and page mode interface

* Dual voltage rails for optional performance

* VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

* Page mode read access

* Interpage Read access : 70ns

* Intrapage Read access : 20ns

* Low Power Consumption

* Asynchronous Operation < 30 mA

* In

IS66WVE4M16BLL Datasheet (544.90 KB)

IS66WVE4M16BLL Datasheet Preview — Preview of IS66WVE4M16BLL PDF

Datasheet Details

Part number:

IS66WVE4M16BLL

Manufacturer:

ISSI

File Size:

544.90 KB

Description:

3.0v core async/page psram.

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IS66WVE4M16BLL 3.0V Core Async Page PSRAM ISSI

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