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IS66WVE4M16TCLL Datasheet - ISSI

IS66WVE4M16TCLL 64Mb Async/Page PSRAM

IS66/67WVE4M16EALL/BLL/CLL IS66/67WVE4M16TALL/BLL/CLL 64Mb Async/Page PSRAM AUGUST 2018 Overview The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current dra.

IS66WVE4M16TCLL Features

* Asynchronous and page mode interface

* Dual voltage rails for optional performance

* ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

* BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

* CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

* Page mode read access

* Interpage Read access : 60ns, 70ns

* Intrap

IS66WVE4M16TCLL Datasheet (586.58 KB)

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Datasheet Details

Part number:

IS66WVE4M16TCLL

Manufacturer:

ISSI

File Size:

586.58 KB

Description:

64mb async/page psram.

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IS66WVE4M16TCLL 64Mb Async Page PSRAM ISSI

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