IS66WVE51216ECLL - 8Mb Async/Page PSRAM
PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.
The 8Mb DRAM core device is organized as 512K x 16 bits.
These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSR
IS66/IS67WVE51216EALL/EBLL/ECLL IS67/IS67WVE51216TALL/TBLL/TCLL 8Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE51216EALL/BLL/CLL and IS66/67WVE51216TALL/BLL/CLL are integrated memory device containing 8Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 512K words by 16 bits.
The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.
Both these modes reduce s
IS66WVE51216ECLL Features
* Asynchronous and page mode interface
* Dual voltage rails for optional performance
* ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
* BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
* CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
* Page mode read access
* Interpage Read access : 60ns, 70ns
* Intrap
