DSEC29-02AS Datasheet - IXYS Corporation

DSEC29-02AS HiPerFRED Epitaxial Diode with common cathode and soft recovery

DSEC 29-02A DSEC 29-02AS HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x15 A VRRM = 200 V trr = 25 ns TO-220 AC A C A VRSM V 200 200 VRRM V 200 200 Type DSEC 29-02A DSEC 29-02AS C (TAB) TO-263 A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 150°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH VA = 1.5 VR typ.; f =.

DSEC29-02AS Features

* International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications

* Antiparallel diode for high frequen

DSEC29-02AS_IXYSCorporation.pdf