DSEC30-03A Datasheet - IXYS Corporation

DSEC30-03A HiPerFRED Epitaxial Diode

DSEC 30-03A www.DataSheet4U.com HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 15 A VRRM = 300 V trr = 30 ns TO-247 AD VRSM V 300 VRRM V 300 Type DSEC 30-03A A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 140°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH VA = 1.5 VR typ.; f = 10 kHz; repetitive Ma.

DSEC30-03A Features

* q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 95 0.81.2 6 q q q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C V

DSEC30-03A_IXYSCorporation.pdf