DSEC30-02A Datasheet - IXYS Corporation

DSEC30-02A HiPerFRED Epitaxial Diode

DSEC 30-02A www.DataSheet4U.com HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 15 A VRRM = 200 V trr = 25 ns A VRSM V 200 VRRM V 200 Type A C TO-247 AD DSEC 30-02A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Test Conditions TC = 150°C; rectangular, d = 0.5 TC = 115°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH VA =.

DSEC30-02A Features

* International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 95 0.81.2 6

* Symbol IR ① Test

DSEC30-02A_IXYSCorporation.pdf