DSEC120-12AK Datasheet - IXYS

DSEC120-12AK - Epitaxial Diode

DSEC 120-12AK HiPerFREDTM Epitaxial Diode with soft recovery Preliminary data IFAV = 2x60 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEC 120-12AK A C A TO-264 A TAB A CA A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 90°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 14.5 A; L = 180 µH VA = 1.5 VR typ.; f = 10 kHz; repetitive TC = 25°C mounting torque M3/M3

DSEC120-12AK Features

* International standard package

* Planar passivated chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Soft recovery behaviour

* Epoxy meets UL 94V-0 Applications

* Antiparallel diode for high frequenc

DSEC120-12AK-IXYS.pdf