DSEP60-03A Datasheet - IXYS Corporation

DSEP60-03A Epitaxial Diode

DSEP 60-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 60 A VRRM = 300 V trr = 30 ns A C VRSM V 300 VRRM V 300 Type TO-247 AD DSEP 60-03A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 110°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 3.5 A; L = 180 µH VA = 1.5 VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 60 700 1.6 0.4 -55+175 175 -55+1.

DSEP60-03A Features

* q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 230 0.81.2 6 q q q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C

DSEP60-03A_IXYSCorporation.pdf