DSEP12-12B Datasheet - IXYS

DSEP12-12B - Epitaxial Diode

DSEP12-12B HiPerFREDTM Epitaxial Diode with soft recovery VRSM V 1200 VRRM V 1200 DSEP 12-12B Type IFAV = 15 A VRRM = 1200 V trr = 35 ns TO-220 AC A C C A C (TAB) ⁭ A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Symbol IR VF RthJC RthCH trr IRM Conditions TC = 120°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 9 A; L = 180 µH VA = 1.25 VR typ.; f = 10 kHz; repetitive Maximum .

DSEP12-12B Features

* International standard package

* Planar passivated chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Soft recovery behaviour

* Epoxy meets UL 94V-0 Applications

* Antiparallel diode for high frequenc

DSEP12-12B_IXYS.pdf