DSEP60-06A Datasheet - IXYS Corporation

DSEP60-06A Epitaxial Diode

DSEP 60-06A DSEP 60-06AT HiPerFREDTM Epitaxial Diode with soft recovery Preliminary Data VRSM V 600 VRRM V 600 DSEP 60-06A DSEP 60-06AT Type A C IFAV = 60 A VRRM = 600 V trr = 35 ns TO-247 AD (A-Type) TO-268 AA (AT-Type) C A C (TAB) A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TVJ = TVJM TC = 110°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.6 A; L = 180 µH VA = 1.

DSEP60-06A Features

* A q mJ A °C °C °C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 230 0.81.2 6 Applications q q q Symbol IR x Condi

DSEP60-06A_IXYSCorporation.pdf