DSEP8-12A Datasheet - IXYS Corporation

DSEP8-12A Epitaxial Diode

DSEP 8-12A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 10 A VRRM = 1200 V trr = 40 ns A C VRSM V 1200 VRRM V Type TO-220 AC C 1200 DSEP 8-12A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 115°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 8 A; L = 180 µH VA = 1.25 VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 10 40 6.9 0.8 -55+175 175 -55.

DSEP8-12A Features

* A q mJ A °C °C °C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 60 0.40.6 2 Applications q q q Symbol IR x Condit

DSEP8-12A_IXYSCorporation.pdf