DSEP9-06CR Datasheet - IXYS Corporation

DSEP9-06CR Epitaxial Diode

DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) IFAV = 9 A VRRM = 600 V trr = 15 ns VRSM V 600 VRRM V 600 Type A C ISOPLUS 247TM C A Isolated back surface DSEP 9-06CR A = Anode, C = Cathode Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 140°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non.

DSEP9-06CR Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low cathode to tab capacitance (< 25 pF)

* International standard package

* Planar passivated chips

* Very short recovery time

DSEP9-06CR_IXYSCorporation.pdf

DSEP9-06CR Datasheet Preview — Preview of DSEP9-06CR PDF

Datasheet Details

Part number:

DSEP9-06CR

Manufacturer:

IXYS Corporation

File Size:

44.77 KB

Description:

Epitaxial diode.

📁 Related Datasheet

DSEP12-12A High Performance Fast Recovery Diode (IXYS)

DSEP12-12A Ultrafast Rectifier (INCHANGE)

DSEP12-12AZ Ultra fast Rectifier (INCHANGE)

DSEP12-12AZ High Performance Fast Recovery Diode (IXYS)

DSEP12-12B Epitaxial Diode (IXYS)

DSEP12-12BZ High Performance Fast Recovery Diode (IXYS)

DSEP130-06A Epitaxial Diode (IXYS Corporation)

DSEP15-06A High Performance Fast Recovery Diode (IXYS)

TAGS

DSEP9-06CR DSEP9-06CR Epitaxial Diode IXYS Corporation

DSEP9-06CR Distributor