Datasheet Details
Part number:
DSEP9-06CR
Manufacturer:
IXYS Corporation
File Size:
44.77 KB
Description:
Epitaxial Diode
Features
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low cathode to tab capacitance (< 25 pF)
* International standard package
* Planar passivated chips
* Very short recovery time
DSEP9-06CR_IXYSCorporation.pdf
DSEP9-06CR, Epitaxial Diode
DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) IFAV = 9 A VRRM = 600 V trr = 15 ns VRSM V 600 VRRM V 600 Type A C ISOPLUS 247TM C A Isolated back surface DSEP 9-06CR A = Anode, C = Cathode Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 140°C; rectangular, d = 0.5 tP < 10 µs; rep.
rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non
DSEP9-06CR Distributor
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