* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
* package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized
GWM120-0075P3 Datasheet (110.33 KB)
GWM120-0075P3
IXYS Corporation
110.33 KB
Six-pack mosfet modules.
www.DataSheet4U.com
GWM 120-0075P3
Three phase full bridge
with Trench MOSFETs in DCB isolated high current package
L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4.
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