GWM120-0075P3 Datasheet (IXYS Corporation)

GWM120-0075P3, Six-Pack MOSFET Modules

www.DataSheet4U.com GWM 120-0075P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 G6 S6 LS5 G5 VDSS = 75 V ID25 = 125 A RDSon typ.

= 3.7 mΩ Pins Gate Pow s er Pin MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions TVJ = 25°C to 150°C Maximum Ratings 75 ±20 125 95 130 85 V V A A A A Applications AC drives in automobiles - electric power steering - star

GWM120-0075P3 Features

* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode

* package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized