GWM180-004X2 Datasheet - IXYS Corporation

GWM180-004X2 Three phase full Bridge

www.DataSheet.co.kr GWM 180-004X2 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary data G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW Straight leads Surface Mount Device G2 S2 MOSFETs Symbol VDSS VGS ID25 ID90 ID110 IF25 IF90 IF110 Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 40 ± 20 180 136 1.

GWM180-004X2 Features

* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode

* package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic

GWM180-004X2 Datasheet (348.92 KB)