* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
* package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic
GWM180-004X2 Datasheet (348.92 KB)
GWM180-004X2
IXYS Corporation
348.92 KB
Three phase full bridge.
www.DataSheet.co.kr
GWM 180-004X2
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
Preliminary data
G1 S1 L+ G3 S3 .
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