GWM120-0075X1 - Three phase full Bridge

IXYS Corporation

Datasheet Details

MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer.
Space and weight savings Package options.
2 lead forms available - straight leads (SL) - SMD lead version (SMD) Characteristic Value.

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Published: Mar 14, 2012 |