GWM160-0055P3 Datasheet - IXYS Corporation

GWM160-0055P3 Three phase full bridge

www.DataSheet4U.com GWM 160-0055P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.3 mΩ MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ±20 160 120 135 90 V V A A A A Applications AC drives in automobiles - electric power steering - starter gen.

GWM160-0055P3 Features

* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode

* package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized

GWM160-0055P3 Datasheet (96.68 KB)