* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
* package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized
GWM160-0055P3 Datasheet (96.68 KB)
GWM160-0055P3
IXYS Corporation
96.68 KB
Three phase full bridge.
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GWM 160-0055P3
Three phase full bridge
with Trench MOSFETs in DCB isolated high current package
Preliminary data
L+ G3 G1 S3 S1 .
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