* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
* package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic
GWM160-0055X1 Datasheet (361.02 KB)
GWM160-0055X1
IXYS Corporation
361.02 KB
Three phase full bridge.
www.DataSheet.co.kr
GWM 160-0055X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G.
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