* MOSFETs in trench technology: - logic level gate control - low RDSon - optimized intrinsic reverse diode
* package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic
GWM220-004P3 Datasheet (80.02 KB)
GWM220-004P3
IXYS Corporation
80.02 KB
Three phase full bridge.
www.DataSheet4U.com
GWM 220-004P3
Three phase full bridge
with Trench MOSFETs in DCB isolated high current package
Preliminary data
L+ G3 G1 S3 S1 L.
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