IXFB62N80Q3 Power MOSFET

IXYS Corporation

Description

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFB62N80Q3 D G S Symbol VDSS VDGR VGSS VGSM ID.

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Datasheet Specifications

Part number: IXFB62N80Q3
Manufacturer: IXYS Corporation
File Size: 659.69 KB
Datasheet: IXFB62N80Q3_IXYSCorporation.pdf
Description: Power MOSFET

Features

* Low Intrinsic Gate Resistance
* Low Package Inductance
* Avalanche Rated
* Fast Intrinsic Rectifier
* Low RDS(on) and QG Advantages
* High Power Density
* Easy to Mount
* Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V

Applications

* DC-DC Converters
* Battery Chargers
* Switch-Mode and Resonant-Mode Power Supplies
* DC Choppers
* Temperature and Lighting Controls © 2020 IXYS CORPORATION, All Rights Reserved DS100341B(1/20) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic V

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IXFB62N80Q3 Power MOSFET IXYS Corporation

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